Mfr. Part
IRGB15B60KDPBF
Manufacturer
Y-IC is a quality distributor of Infineon Technologies products. We will provide customers with the best products and services.
Detailed Description
The IRGB15B60KDPBF is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. It is a non-punch-through IGBT with a maximum collector-emitter voltage of 600V and a maximum collector current of 31A.
Key Features
Non-punch-through IGBT (NPT)
Maximum collector-emitter voltage of 600V
Maximum collector current of 31A
Pulsed collector current of 62A
Low on-state voltage of 2.2V @ 15V, 15A
Maximum power dissipation of 208W
Switching energy of 220µJ (on) and 340µJ (off)
Standard input type
Gate charge of 56nC
Turn-on delay time of 34ns and turn-off delay time of 184ns
Reverse recovery time of 92ns
Operating temperature range of -55°C to 150°C
Key Advantages
Improved efficiency and reliability
Suitable for a wide range of industrial and power conversion applications
Excellent thermal and electrical performance
Packaging
The IRGB15B60KDPBF is packaged in a TO-220-3 through-hole package. The package provides good thermal and electrical characteristics.
Lifecycle
The IRGB15B60KDPBF is an obsolete product. However, there are equivalent or alternative models available from Infineon Technologies. Customers are advised to contact our sales team via the Y-IC website for more information on available options.
Key Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Other power conversion and control applications
Datasheet
The most authoritative datasheet for the IRGB15B60KDPBF is available on the Y-IC website. Customers are recommended to download the datasheet for detailed product specifications and information.
Request for Quotation Now
Customers are recommended to obtain quotes for the IRGB15B60KDPBF on the Y-IC website. Get a quote or learn more about this product and other available options by visiting our website.
